Chin. Phys. Lett.  1986, Vol. 3 Issue (7): 297-300    DOI:
Original Articles |
PHOTO-INDUCED REVERSIBLE CHANGE OF URBACH EDGE IN HYDROGENATED AMORPHOUS SILICON
HAN Daxing;QIU Changhua;WU Wenhao
Institute of Physlcs, Academia Sinica, Beijing
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HAN Daxing, QIU Changhua, WU Wenhao 1986 Chin. Phys. Lett. 3 297-300
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Abstract Photoconductivity spectra temperature dependence combining with transmission measurements have been formed on hydrogenated amorphous silicon. After exposure by AM1 light a reversible increase of 6% of the Urbach parameter E0 (T,X) has been observed. This is a direct evidence for the fact that photo-induced changes in a-Si:H create not only metastable defects but also affect the topological disorder.
Published: 01 July 1986
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QIU Changhua
WU Wenhao
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