Chin. Phys. Lett.  1986, Vol. 3 Issue (5): 229-232    DOI:
Original Articles |
ELLIPSOMETRIC SPECTRA AND DAMAGE PROFILES OF ION IMPLANTED SILICON
MO Dang;HE Xingfei
Department of Physics, Zhongshan University, Guangzhou
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MO Dang, HE Xingfei 1986 Chin. Phys. Lett. 3 229-232
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Abstract By means of optimization with a multilayer model, the damage profile can be obtained from the measured data by spectroscopic ellipsometry without stripping. The damage profiles of 40keV As+ implanted Si at doses of 4 x 1013 and 1. 4 x 1014 ions cm-2 are shown and compared with those determined by Rutherford backscattering.
Published: 01 May 1986
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y1986/V3/I5/0229
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