| Original Articles |
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GENERATION RATE OF THE LIGHT-INDUCED DEFECTS AND THE TEMPERATURE DEPENDENCE OF PHOTOCONDUCTIVITY IN a–Si:H |
| HAN Daxing;ZHAO Shifu;QIU Changhua;WU Wenhao* |
| Institute of Physics, Academia Sinica, Beijing
*Shanghai Institute of Technical Physics, Academia Sinica, Shanghai |
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| Cite this article: |
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HAN Daxing, ZHAO Shifu, QIU Changhua et al 1986 Chin. Phys. Lett. 3 81-84 |
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Abstract The time dependence of the creation process of the light-induced defects is observed in a-Si:H. It is found that the density of defects increases with time of light exposure in two steps: at first ΔNsαt0.7~1.0. and then ΔNsαt1/3. Photoconductivity excited by photons of 1. 0eV between 130K and 200K shows an activation energy which decreases with prolonged light exposure.
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Published: 01 February 1986
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