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THE STAEBLER-WRONSKI EFFECT IN MICROCRYSTALLINE SILICON FILMS |
| LIU Xiangna;XU Mingde |
| Institute of Solid State Physics, Nanjing University, Nanjing |
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| Cite this article: |
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LIU Xiangna, XU Mingde 1986 Chin. Phys. Lett. 3 73-76 |
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Abstract Light-induced dark- and photoconductivity changes (so-called SWE) have been investigated on GD undoped microcrystalline Si:H(μc-Si:Hl). The SWE decreases and reaches vanishirö as the grain size increases. An interpretation for the two-phase structure and the contribution of grain boundary defects is given.
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Published: 01 February 1986
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