| Original Articles |
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X-RAY MEASUREMENT OF THE GRAIN SIZES OF WSi2 FORMED IN COSPUTTERED W-Si FILMS |
| JIANG Xiaoming;HUANG Yonglan;WU Ziqin;LI Bingzong |
| Fundamental Physics Center, University of Science and Technology of China, Hefei
Department of Electronic Engineering, Fudan University, Shanghai |
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| Cite this article: |
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JIANG Xiaoming, HUANG Yonglan, WU Ziqin et al 1986 Chin. Phys. Lett. 3 569-572 |
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Abstract The broadening of X-ray diffraction peaks has been used successfully to measure the grain sizes of WSi2 in cosputtered W-Si films after annealing. The grain size of WSi2 increases with annealing temperature and reaches 115nm after annealing at 1000°C. The grain sizes are quite similar to that obtained by transmission electron microscope in electron beam coevaporated film and low pressure chemical vapor deposited film.
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Published: 01 December 1986
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