Chin. Phys. Lett.  1986, Vol. 3 Issue (12): 549-552    DOI:
Original Articles |
THE STRUCTURAL CHANGE OF Mo/GaAs INTERFACE AFTER ANNEALING
ZHANG Shuyuan;WU Ziqin
Structure Analysis Laboratory, University of Science and Technology of China, Hefei, Anhui
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ZHANG Shuyuan, WU Ziqin 1986 Chin. Phys. Lett. 3 549-552
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Abstract The interface contact of Mo/GaAs has been investigated by THREM and electron diffraction. It was found that a Mo3Ga structure was produced at the interfacial region after 500°C annealing due to the solid reaction.
Published: 01 December 1986
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WU Ziqin
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