Chin. Phys. Lett.  1985, Vol. 2 Issue (6): 277-280    DOI:
Original Articles |
THE BEHAVIOUR OF Si IN AlxGa1-xAs GROWN BY MBE
ZHOU Jun-ming;HUANG-Yi;YANG Zhong-xing;CHENG Wen-qin
Institute of Physics, Academia Sinica, Beijing
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ZHOU Jun-ming, HUANG-Yi, YANG Zhong-xing et al  1985 Chin. Phys. Lett. 2 277-280
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Abstract With the use of RHEED, a new surface reconstruction AlxGa1-xAs (001)-(3 x 2) induced by Si dopant, and a Si dopant effect for suppressing island growth and promoting layer by layer growth are observed.


Published: 01 June 1985
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y1985/V2/I6/0277
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ZHOU Jun-ming
HUANG-Yi
YANG Zhong-xing
CHENG Wen-qin
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