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INVESTIGATION OF THE THERMAL DONORS IN SILICON |
| ZHOU Jie;GAO Xiao-ping;XU Zhen-jia(C. C. Hsu) |
| Institute of Semiconductors, Academia Sinica, Beijing |
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| Cite this article: |
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ZHOU Jie, GAO Xiao-ping, XU Zhen-jia(C. C. Hsu) 1985 Chin. Phys. Lett. 2 245-248 |
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Abstract We have made, for the first time, a trial study of the electric behaviours of the 450°C annealed CZ-Si having several different dopings. Four energy levels were observed (E1 = Ec-(280-350)meV; E2 = Ec-(110-120)meV; E3 = Ec-(52-60)meV; E4 = Ec-30meV) in p-Si samples, which were capable of undergoing type change after annealing. In the heat-treated n-Si samples, only E2 and E4 were observed. Although these levels correspond to different structure models, they are all related, in one way or another, to the oxygen atoms in Si.
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Published: 01 June 1985
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