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A THEORETICAL STUDY OF PRESSURE BEHAVIOURS OF N AND NNj TRAPS IN Gap |
| YANG Gui-lin |
| Institute of Semiconductors, Academia Sinica, Beijing |
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| Cite this article: |
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YANG Gui-lin 1985 Chin. Phys. Lett. 2 197-200 |
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Abstract We find that the changes of curvatures of the conduction band minima have a crucial influence on the pressure behavious of N and NNj traps in Gap. The results calculated with a simple model representing such pressure variations of the conduction band show very good agreement with the experiments.
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Published: 01 May 1985
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