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A MODEL FOR SIMULATION OF THE COMPOSITION-DEPTH PROFILE OBTAINED BY ION SPUTTERING |
| QU Zhe;XIE Tian-sheng |
| Institute of Metal Research, Academia Sinica, Shenyang |
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| Cite this article: |
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QU Zhe, XIE Tian-sheng 1985 Chin. Phys. Lett. 2 165-168 |
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Abstract A model for describing the profiling process has been proposed based on the commonly used assumptions. The concentration and the depth of the sputtered element can be calculatted simultaneously by using the derived equations. The model is suitable not only for binary systems but also for multicomponent systems. It can be applied to the system where the inherent component distribution is constant or varies as a function of depth.
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Published: 01 April 1985
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