Chin. Phys. Lett.  1985, Vol. 2 Issue (12): 529-532    DOI:
Original Articles |
PHOTOLUMINESCENCE STUDIES OF GaAs-GaAlAs MULTIPLE QUANTUM WELLS
XU Zhong-ying;XU Ji-zong;CHEN Zong-gui;ZHUANG Wei-hua;XU Jun-ying;ZHENG Bao-zhen;TENG Da;LI Yu-zhang
Institute of Semiconductors, Academia Sinica, Beijing
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XU Zhong-ying, XU Ji-zong, CHEN Zong-gui et al  1985 Chin. Phys. Lett. 2 529-532
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Abstract Photoluminescence experiments have been performed on GaAg-GaAlAs. quantum well structures with well widths ranging from 40Å to 145Å. Both the intrinsic and extrinsic transitions have been observed. Relatively strong interface-related luminescence is believed to be due to the presence of more trapped impurities at the interfaces.

Published: 01 December 1985
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XU Zhong-ying
XU Ji-zong
CHEN Zong-gui
ZHUANG Wei-hua
XU Jun-ying
ZHENG Bao-zhen
TENG Da
LI Yu-zhang
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