NITROGEN ISOELECTRONIC TRAPS IN GaAs

Chin. Phys. Lett.

1984, Vol. 1

Issue (1): 19-22 DOI:

Original Articles

NITROGEN ISOELECTRONIC TRAPS IN GaAs

ZHAO Xue-shu;LI Guo-hua;HAN He-xiang;WANG Zhao-ping;TANG Ru-ming*;CHE Rong-zhen*

Institute of Semiconductors, Academia Sinica *Institute of Physics, Academia Sinica

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ZHAO Xue-shu, LI Guo-hua, HAN He-xiang et al 1984 Chin. Phys. Lett. 1 19-22

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Abstract The photoluminescence spectrum of N central cell potential bound exciton N_x as well as emission peak from deformation potential bound exclton have been observed under hydrostatic pressures. The variation of the electron-phonon coupling and effective bound exciton radius with pressure is discussed.

Published: 30 June 1984

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1984/V1/I1/019

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	ZHAO Xue-shu
	LI Guo-hua
	HAN He-xiang
	WANG Zhao-ping
	TANG Ru-ming
	CHE Rong-zhen

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