| Original Articles |
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PHOTOLUMINESCENCE OF GaP(N, Te, Zn) UNDER HYDROSTATIC PRESSURE |
| ZHAO Xue-shu;LI Guo-hua;HAN He-xiang;WANG Zhao-ping;TANG Ru-ming*;HU Jing-zhu* |
| Institute of Semiconductors, Academia Sinica
*Institute of Physics, Academia. Sinica |
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| Cite this article: |
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ZHAO Xue-shu, LI Guo-hua, HAN He-xiang et al 1984 Chin. Phys. Lett. 1 15-18 |
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Abstract Photoluminescence spectrum of Gap ( N, Te , Zn ) under hydrostatic pressure was measured at 77K. Pressure coefficients for Te donor level as well as energy levels of excitons bound to N, NN1, NN3, and neutral donor Te were obtained. The pressure shifts of these levels were discussed. The zero phonon line of free exciton in Gap was observed for the first time.
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Published: 30 June 1984
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