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Volume 3 Issue 2
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Original Articles
FABRICATION AND PROPERTIES OF Nb3Sn-Pb JOSEPHSON TUNNEL JUNCTIONS
MENG Xiaofan
Chin. Phys. Lett. 1986, 3 (2): 49-52 .  
Abstract   PDF(pc) (41KB) ( 422 )
Nb3Sn-Pb Josephson tunnel juntions were fabricated using Nb3Sn thin films formed by a simple coevaporation technique, while the tunnel barriers were formed by RF oxidation in an Ar and O2 gas mixture. The I-V characteristics were measured at 4.2K, in which a sharp current rise at the gap voltage of 4.35mV was observed. The ratio of the subgap resistance to the normal one is as high as 6. The Nb3Sn-Pb tunnel junction prepared are of good quality.

EXPERIMENTAL AND THEORETICAL MORPHOLOGY OF SALOL
JIN Weiqing*, Hiroshi Komatsu, Tetsuo Inoue
Chin. Phys. Lett. 1986, 3 (2): 53-56 .  
Abstract   PDF(pc) (47KB) ( 343 )
The morphology of salol crystals in relation to supercooling has been studied by means of the in situ observation method and the Kyropoulos technique; and Hartman-Perdok's PBC method was used to analyse the morphology based on the relationship between crystal form and its structure. The experimental results of the morphology of salol crystals are compared with the theoretical calculations.
EXPERIMENTAL RESULTS ON OPTOGALVANIC EFFECT OF RUBIDIUM
ZHONG Xubin, LIU Jinting, LIU Binmo
Chin. Phys. Lett. 1986, 3 (2): 57-60 .  
Abstract   PDF(pc) (53KB) ( 398 )
We report, for the first time, the experimental results on the optogalvanic effect of Rb by using RF discharge without buffer gas. The influence of laser power and RF source current has been studied. The enhancement of the optogalvanic effect by heating the Rb cell and the optogalvanic signals of K as an impurity in Rb vapor have been observed.

A NEW METHOD FOR IMAGE TRANSMISSION USING FOUR-WAVE MIXING
LIN Hong, ZHANG Hongjun, DAI Jianhua
Chin. Phys. Lett. 1986, 3 (2): 61-64 .  
Abstract   PDF(pc) (44KB) ( 364 )
A new method using degenerate four-wave mixing for one-way imaging through phase distorting medium is presented. The theoretical analysis and experimental results are given.

ACTIVATION ENERGY OF ELECTROMIGRATION IN THIN METAL FILMS
WANG Qimin, WU Yunzhong, SUN Chenglong
Chin. Phys. Lett. 1986, 3 (2): 65-68 .  
Abstract   PDF(pc) (37KB) ( 397 )
A new method for measuring the activation energy of electromigration in thin metal films has been established.
CRYSTALLIZATION BEHAVIOUR NEAR THE HIGH TEMPERATURE INTERNAL FRICTION PEAK OF a-Pd80Si20 ALLOY
SHUI Jiapeng, HE Yizhen
Chin. Phys. Lett. 1986, 3 (2): 69-72 .  
Abstract   PDF(pc) (50KB) ( 300 )
The crystallization behaviour of a-Pd80Si20 in the high temperature internal friction peak region is systematically studied by DSC and X-ray diffraction techniques.

THE STAEBLER-WRONSKI EFFECT IN MICROCRYSTALLINE SILICON FILMS
LIU Xiangna, XU Mingde
Chin. Phys. Lett. 1986, 3 (2): 73-76 .  
Abstract   PDF(pc) (53KB) ( 390 )
Light-induced dark- and photoconductivity changes (so-called SWE) have been investigated on GD undoped microcrystalline Si:H(μc-Si:Hl). The SWE decreases and reaches vanishirö as the grain size increases. An interpretation for the two-phase structure and the contribution of grain boundary defects is given.
STUDY OF FREEDERICKSZ TRANSITION BY FOUR-WAVE MIXING METHOD
YU Dejin, CHU Guiyin, FU Panming, YE Peixian
Chin. Phys. Lett. 1986, 3 (2): 77-80 .  
Abstract   PDF(pc) (42KB) ( 341 )
On the base of the anisotropy of four-wave mixing singal, Freedericksz transition of nematic liquid crystal has been studied by FWM method for the first time.


GENERATION RATE OF THE LIGHT-INDUCED DEFECTS AND THE TEMPERATURE DEPENDENCE OF PHOTOCONDUCTIVITY IN a–Si:H
HAN Daxing, ZHAO Shifu, QIU Changhua, WU Wenhao*
Chin. Phys. Lett. 1986, 3 (2): 81-84 .  
Abstract   PDF(pc) (53KB) ( 389 )
The time dependence of the creation process of the light-induced defects is observed in a-Si:H. It is found that the density of defects increases with time of light exposure in two steps: at first ΔNsαt0.7~1.0. and then ΔNsαt1/3. Photoconductivity excited by photons of 1. 0eV between 130K and 200K shows an activation energy which decreases with prolonged light exposure.


THE STATIC SOLITON SOLUTIONS WITH B = 0,2 IN THE SKYRME MODEL
HUANG Tao, WEN Jiaru, ZHOU Xianjian
Chin. Phys. Lett. 1986, 3 (2): 85-88 .  
Abstract   PDF(pc) (39KB) ( 397 )
It is shown that there are two kinds of static soliton solutions in the Skyrme model with the baryon number B = 0,2. They may be interpreted as baryonium for meson) and dibaryon respectively, and their masses depend on a dimensionless parametor a2 (0 < a21 for B = 0 and 0 a2 1 for B = 2).





THE STRUCTURE AND ELECTRONIC STATES OF NiSi2/Si(lll) INTERFACES
XU Yongnian, ZHANG Kaiming, XIE Xide
Chin. Phys. Lett. 1986, 3 (2): 89-92 .  
Abstract   PDF(pc) (55KB) ( 435 )
A theoretical investigation of NiSi2/Si (111) interfaces using empirical tight binding method and Slab Model is presented. The positions of Fermi level Ef for various types of interfaces has been compared. The heights of Ef for type-I(a) and type-II(a) or for type-I(b) and type-II(b) are the same; but there exists a difference of 0.leV between type-I(a) and -I(b) as well as for type-II(a) and -II(b). The local densities of states of some typical layers in the slab have also been studied.

CONTINUOUS TIME RANDOM WALKS ON FRACTALS: RIGOROUS RESULTS
WEN Chao, LIU Fusui*
Chin. Phys. Lett. 1986, 3 (2): 93-95 .  
Abstract   PDF(pc) (31KB) ( 375 )
Continuous time random walk on fractals is studied Asymptotic forms of < r2(t)>, S(t ) and P(t) are obtained rigorously by the generalized Blackwell theorem, where < r2(t) > is the mean-square displacement, S(t) the number of distinct sites visited in time t, and P(t) the probability of return at time t. The spatial disorder turns out to be predominant for long time.






12 articles