Nb₃Sn-Pb Josephson tunnel juntions were fabricated using Nb₃Sn thin films formed by a simple coevaporation technique, while the tunnel barriers were formed by RF oxidation in an Ar and O₂ gas mixture. The I-V characteristics were measured at 4.2K, in which a sharp current rise at the gap voltage of 4.35mV was observed. The ratio of the subgap resistance to the normal one is as high as 6. The Nb₃Sn-Pb tunnel junction prepared are of good quality.

The morphology of salol crystals in relation to supercooling has been studied by means of the in situ observation method and the Kyropoulos technique; and Hartman-Perdok's PBC method was used to analyse the morphology based on the relationship between crystal form and its structure. The experimental results of the morphology of salol crystals are compared with the theoretical calculations.

We report, for the first time, the experimental results on the optogalvanic effect of Rb by using RF discharge without buffer gas. The influence of laser power and RF source current has been studied. The enhancement of the optogalvanic effect by heating the Rb cell and the optogalvanic signals of K as an impurity in Rb vapor have been observed.

A new method using degenerate four-wave mixing for one-way imaging through phase distorting medium is presented. The theoretical analysis and experimental results are given.

A new method for measuring the activation energy of electromigration in thin metal films has been established.

The crystallization behaviour of a-Pd₈₀Si₂₀ in the high temperature internal friction peak region is systematically studied by DSC and X-ray diffraction techniques.

Light-induced dark- and photoconductivity changes (so-called SWE) have been investigated on GD undoped microcrystalline Si:H(μc-Si:Hl). The SWE decreases and reaches vanishirö as the grain size increases. An interpretation for the two-phase structure and the contribution of grain boundary defects is given.

On the base of the anisotropy of four-wave mixing singal, Freedericksz transition of nematic liquid crystal has been studied by FWM method for the first time.

The time dependence of the creation process of the light-induced defects is observed in a-Si:H. It is found that the density of defects increases with time of light exposure in two steps: at first ΔN_s^αt^0.7~1.0. and then ΔN_s^αt^1/3. Photoconductivity excited by photons of 1. 0eV between 130K and 200K shows an activation energy which decreases with prolonged light exposure.

It is shown that there are two kinds of static soliton solutions in the Skyrme model with the baryon number B = 0,2. They may be interpreted as baryonium for meson) and dibaryon respectively, and their masses depend on a dimensionless parametor a² (0 < a²1 for B = 0 and 0 a² 1 for B = 2).

A theoretical investigation of NiSi₂/Si (111) interfaces using empirical tight binding method and Slab Model is presented. The positions of Fermi level E_f for various types of interfaces has been compared. The heights of E_f for type-I(a) and type-II(a) or for type-I(b) and type-II(b) are the same; but there exists a difference of 0.leV between type-I(a) and -I(b) as well as for type-II(a) and -II(b). The local densities of states of some typical layers in the slab have also been studied.

Continuous time random walk on fractals is studied Asymptotic forms of < r²(t)>, S(t ) and P(t) are obtained rigorously by the generalized Blackwell theorem, where < r²(t) > is the mean-square displacement, S(t) the number of distinct sites visited in time t, and P(t) the probability of return at time t. The spatial disorder turns out to be predominant for long time.