Dislocation Movement in Nitrogen-Doped Czochralski Silicon
Chin. Phys. Lett. 1996, 13 (5):
Dislocation movement in N-doped Czochralski silicon ( Cz-Si ) was surveyed by four point bend method, Dislocation movement velocities in Cz-Si doped with nitrogen, with both nitrogen and antimony, and with only antimony were investigated, The order of measured dislocation movement velocities, at 700°C ≤ T≤ 800°C and under resolved stress σ = 4.1 kg/ mm2, was Vsb,O >VN,sb,O >VN,O. The experiments showed that nitrogen doping could retard the movement of dislocations.