%A Jing Shi, Yong Gao, Xiao-Li Wang, Si-Ning Yun
%T Electronic, Elastic and Piezoelectric Properties of Two-Dimensional Group-IV Buckled Monolayers
%0 Journal Article
%D 2017
%J Chin. Phys. Lett.
%R 10.1088/0256-307X/34/8/087701
%P 087701%V 34
%N 8
%U {http://cpl.iphy.ac.cn/CN/abstract/article_70907.shtml}
%8 2017-07-10
%X Electronic, elastic and piezoelectric properties of two-dimensional (2D) group-IV buckled monolayers (GeSi, SnSi and SnGe) are studied by first principle calculations. According to our calculations, SnSi and SnGe are good 2D piezoelectric materials with large piezoelectric coefficients. The values of $d_{11}$ of SnSi and SnGe are 5.04 pm/V and 5.42 pm/V, respectively, which are much larger than 2D MoS$_{2}$ (3.6 pm/V) and are comparable with some frequently used bulk materials (e.g., wurtzite AlN 5.1 pm/V). Charge transfer is calculated by the Löwdin analysis and we find that the piezoelectric coefficients ($d_{11}$ and $d_{31}$) are highly dependent on the polarizabilities of the anions and cations in group-IV monolayers.