Chin. Phys. Lett.  2018, Vol. 35 Issue (9): 098101    DOI: 10.1088/0256-307X/35/9/098101
CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Flow Field and Temperature Field in GaN-MOCVD Reactor Based on Computational Fluid Dynamics Modeling
Shu-Zhe Mei1,2, Quan Wang1,3, Mei-Lan Hao1,2,4, Jian-Kai Xu1,2, Hong-Ling Xiao1,2, Chun Feng1,2, Li-Juan Jiang1,2, Xiao-Liang Wang1,2**, Feng-Qi Liu1,2, Xian-Gang Xu3, Zhan-Guo Wang1,2
1Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2University of Chinese Academy of Sciences, Beijing 100049
3State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100
4School of Information & Electrical Engineering, Hebei University of Engineering, Handan 056038
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Shu-Zhe Mei, Quan Wang, Mei-Lan Hao et al  2018 Chin. Phys. Lett. 35 098101
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Abstract Metal organic chemical vapor deposition (MOCVD) growth systems are one of the main types of equipment used for growing single crystal materials, such as GaN. To obtain film epitaxial materials with uniform performance, the flow field and temperature field in a GaN-MOCVD reactor are investigated by modeling and simulating. To make the simulation results more consistent with the actual situation, the gases in the reactor are considered to be compressible, making it possible to investigate the distributions of gas density and pressure in the reactor. The computational fluid dynamics method is used to study the effects of inlet gas flow velocity, pressure in the reactor, rotational speed of graphite susceptor, and gases used in the growth, which has great guiding significance for the growth of GaN film materials.
Received: 31 May 2018      Published: 29 August 2018
PACS:  81.15.Aa (Theory and models of film growth)  
  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  81.05.Ea (III-V semiconductors)  
Fund: Supported by the National Key R&D Program of China under Grant No 2016YFB0400104.
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http://cpl.iphy.ac.cn/10.1088/0256-307X/35/9/098101       OR      http://cpl.iphy.ac.cn/Y2018/V35/I9/098101
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Shu-Zhe Mei
Quan Wang
Mei-Lan Hao
Jian-Kai Xu
Hong-Ling Xiao
Chun Feng
Li-Juan Jiang
Xiao-Liang Wang
Feng-Qi Liu
Xian-Gang Xu
Zhan-Guo Wang
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