Chin. Phys. Lett.  2018, Vol. 35 Issue (5): 056803    DOI: 10.1088/0256-307X/35/5/056803
Crystallization Process of Superlattice-Like Sb/SiO$_{2}$ Thin Films for Phase Change Memory Application
Xiao-Qin Zhu1, Rui Zhang1, Yi-Feng Hu1,3,4**, Tian-Shu Lai2, Jian-Hao Zhang1, Hua Zou1, Zhi-Tang Song5
1School of Mathematics and Physics, Jiangsu University of Technology, Changzhou 213001
2State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275
3State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027
4Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029
5State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050
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Xiao-Qin Zhu, Rui Zhang, Yi-Feng Hu et al  2018 Chin. Phys. Lett. 35 056803
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Abstract After compositing with SiO$_{2}$ layers, it is shown that superlattice-like Sb/SiO$_{2}$ thin films have higher crystallization temperature ($\sim240^{\circ}\!$C), larger crystallization activation energy (6.22 eV), and better data retention ability (189$^{\circ}\!$C for 10 y). The crystallization of Sb in superlattice-like Sb/SiO$_{2}$thin films is restrained by the multilayer interfaces. The reversible resistance transition can be achieved by an electric pulse as short as 8 ns for the Sb(3 nm)/SiO$_{2}$(7 nm)-based phase change memory cell. A lower operation power consumption of 0.09 mW and a good endurance of $3.0\times10^{6}$ cycles are achieved. In addition, the superlattice-like Sb(3 nm)/SiO$_{2}$(7 nm) thin film shows a low thermal conductivity of 0.13 W/(m$\cdot$K).
Received: 27 November 2017      Published: 30 April 2018
PACS:  68.05.Cf (Liquid-liquid interface structure: measurements and simulations)  
  68.55.-a (Thin film structure and morphology)  
  68.65.-k (Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties)  
Fund: Supported by the National Natural Science Foundation of China under Grant No 11774438, the Natural Science Foundation of Jiangsu Province under Grant No BK20151172, the Changzhou Science and Technology Bureau under Grant No CJ20160028, the Qing Lan Project, the Opening Project of State Key Laboratory of Silicon Materials under Grant No SKL2017-04, and the Opening Project of Key Laboratory of Microelectronic Devices and Integrated Technology of Institute of Microelectronics of Chinese Academy of Sciences.
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Xiao-Qin Zhu
Rui Zhang
Yi-Feng Hu
Tian-Shu Lai
Jian-Hao Zhang
Hua Zou
Zhi-Tang Song
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