| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
|
|
|
|
Improved Operation Characteristics for Nonvolatile Charge-Trapping Memory Capacitors with High-$\kappa$ Dielectrics and SiGe Epitaxial Substrates |
| Zhao-Zhao Hou1,2, Gui-Lei Wang1,2, Jin-Juan Xiang1,2, Jia-Xin Yao1,2, Zhen-Hua Wu1, Qing-Zhu Zhang1, Hua-Xiang Yin1,2** |
1Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029
2University of Chinese Academy of Sciences, Beijing 100049
|
|
| Cite this article: |
|
Zhao-Zhao Hou, Gui-Lei Wang, Jin-Juan Xiang et al 2017 Chin. Phys. Lett. 34 097304 |
|
|
|
|
Abstract A novel high-$\kappa$ Al$_{2}$O$_{3}$/HfO$_{2}$/Al$_{2}$O$_{3}$ nanolaminate charge trapping memory capacitor structure based on SiGe substrates with low interface densities is successfully fabricated and investigated. The memory capacitor exhibits excellent program-erasable characteristics. A large memory window of $\sim $4 V, a small leakage current density of $\sim $2 $\times$ 10$^{-6}$ Acm$^{-2}$ at a gate voltage of 7 V, a high charge trapping density of $1.42\times 10^{13}$ cm$^{-2}$ at a working voltage of $\pm$10 V and good retention characteristics are observed. Furthermore, the programming ($\Delta V_{\rm FB}=2.8$ V at 10 V for 10 μs) and erasing speeds ($\Delta V_{\rm FB}=-1.7$ V at $-$10 V for 10 μs) of the fabricated capacitor based on SiGe substrates are significantly improved as compared with counterparts reported earlier. It is concluded that the high-$\kappa$ Al$_{2}$O$_{3}$/HfO$_{2}$/Al$_{2}$O$_{3}$ nanolaminate charge trapping capacitor structure based on SiGe substrates is a promising candidate for future nano-scaled nonvolatile flash memory applications.
|
|
|
Received: 05 June 2017
Published: 15 August 2017
|
|
| PACS: |
73.40.Qv
|
(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
|
| |
77.55.D-
|
|
| |
77.55.dj
|
(For nonsilicon electronics (Ge, III-V, II-VI, organic electronics))
|
| |
77.55.Px
|
(Epitaxial and superlattice films)
|
|
|
| Fund: Supported by the National Science and Technology Major Project of China under Grant No 2013ZX02303007, the National Key Research and Development Program of China under Grant No 2016YFA0301701, and the Youth Innovation Promotion Association of the Chinese Academy of Sciences under Grant No 2016112. |
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
