Chin. Phys. Lett.  2017, Vol. 34 Issue (8): 084202    DOI: 10.1088/0256-307X/34/8/084202
High-Power Single-Spatial-Mode GaSb Tapered Laser around 2.0μm with Very Small Lateral Beam Divergence
Shu-Shan Huang1,2,3, Yu Zhang1,2,3, Yong-Ping Liao1,2,3, Cheng-Ao Yang1,2,3, Xiao-Li Chai1,2,3, Ying-Qiang Xu1,2,3, Hai-Qiao Ni1,2,3, Zhi-Chuan Niu1,2,3**
1State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049
3Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026
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Abstract We report high-power single-spatial-mode type-I GaSb-based tapered lasers fabricated on the InGaSb/AlGaAsSb material system. A straight ridge and three different tapered waveguide structures with varying flare angles are fabricated to optimize the output power and spatial-mode performance. The best devices exhibit single-spatial-mode operation with room-temperature output power up to 350 mW in continuous-wave mode at an emission wavelength around 2.0 μm with a very small far-field lateral divergence angle, which is beyond state of the art in terms of single-spatial-mode output power.
Received: 22 January 2017      Published: 22 July 2017
PACS:  42.55.Px (Semiconductor lasers; laser diodes)  
  78.55.Cr (III-V semiconductors)  
  78.67.De (Quantum wells)  
Fund: Supported by the National Basic Research Program of China under Grant Nos 2014CB643903 and 2013CB932904, the National Natural Science Foundation of China under Grant Nos 61435012 and 61290303, and the Strategic Priority Research Program (B) of the Chinese Academy of Sciences under Grant No XDB01010200.
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Shu-Shan Huang, Yu Zhang, Yong-Ping Liao et al  2017 Chin. Phys. Lett. 34 084202
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Shu-Shan Huang
Yu Zhang
Yong-Ping Liao
Cheng-Ao Yang
Xiao-Li Chai
Ying-Qiang Xu
Hai-Qiao Ni
Zhi-Chuan Niu
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