| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
|
|
|
|
Interfacial and Electrical Properties of GaAs Metal-Oxide-Semiconductor Capacitor with ZrAlON as the Interfacial Passivation Layer |
| Han-Han Lu, Jing-Ping Xu**, Lu Liu |
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074
|
|
| Cite this article: |
|
Han-Han Lu, Jing-Ping Xu, Lu Liu 2017 Chin. Phys. Lett. 34 047303 |
|
|
|
|
Abstract The ZrTiON gate-dielectric GaAs metal-oxide-semiconductor (MOS) capacitors with or without ZrAlON as the interfacial passivation layer (IPL) are fabricated and their properties are investigated. The experimental results show that the GaAs MOS capacitor with the ZrAlON IPL exhibits better interfacial and electrical properties, including lower interface-state density ($1.14\times10^{12}$ cm$^{-2}$eV$^{-1})$, smaller gate leakage current ($6.82\times10^{-5}$ A/cm$^{2}$ at $V_{\rm fb}$+1 V), smaller capacitance equivalent thickness (1.5 nm), and larger $k$ value (26). The involved mechanisms lie in the fact that the ZrAlON IPL can effectively block the diffusion of Ti and O towards the GaAs surface, thus suppressing the formation of interfacial Ga-/As-oxides and As-As dimers, which leads to improved interfacial and electrical properties for the devices.
|
|
|
Received: 21 January 2017
Published: 21 March 2017
|
|
| PACS: |
73.40.Qv
|
(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
|
| |
73.40.Kp
|
(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
|
| |
73.61.Ey
|
(III-V semiconductors)
|
|
|
| Fund: Supported by the National Natural Science Foundation of China under Grant Nos 61176100, 61274112 and 61404055. |
|
|
|
| [1] | Aoki T, Fukuhara N, Osada T, Sazawa H, Hata M and Inoue T 2014 Appl. Phys. Lett. 105 033513 | | [2] | Wang L S, Liu L, Xu J P, Zhu S Y, Huang Y and Lai P T 2014 IEEE Trans. Electron Devices 61 742 | | [3] | Aoki T, Fukuhara N, Osada T, Sazawa H, Hata M and Inoue T 2015 AIP Adv. 5 087149 | | [4] | Das P S and Biswas A 2015 Appl. Phys. A Mater. Sci. Process. 118 967 | | [5] | Liu C, Zhang Y M and Lv H L 2014 J. Appl. Phys. 116 222207 | | [6] | Lim H, Kim S, Kim J R, Song J H, Lee N I, Jeong J K and Kim H J 2015 Phys. Status Solidi A 212 1911 | | [7] | Ye P D, Wilk G D, Yang B, Kwo J, Chu S N G, Nakahara S, Gossmann H J L, Mannaerts J P, Hong M, Ng K K and Bude J 2003 Appl. Phys. Lett. 83 180 | | [8] | Lee M K and Yen C F 2014 Appl. Phys. A: Mater. Sci. Process. 116 2051 | | [9] | Dalapati G K, Wong T K S, Li Y, Chia C K, Das A, Mahata C, Gao H, Chattopadhyay S, Kumar M K, Seng H L, Maiti C K and Chi D Z 2012 Nanoscale Res. Lett. 7 99 | | [10] | Lu H L, Sun L, Ding S J, Xu M, Zhang D W and Wang L K 2006 Appl. Phys. Lett. 89 152910 | | [11] | Liu C, Zhang Y M, Zhang Y M and Lu H L 2013 Chin. Phys. B 22 076701 | | [12] | Chang Y C, Merckling C, Penaud J, Lu C Y, Wang W E, Dekoster J, Meuris M, Caymax M, Heyns M, Kwo J and Hong M 2010 Appl. Phys. Lett. 97 112901 | | [13] | Robertson J and Falabretti B 2006 J. Appl. Phys. 100 014111 | | [14] | Gaskell J M, Jones A C, Aspinall H C, Taylor S, Taechakumput P, Chalker P R, Heys P N and Odedra R 2007 Appl. Phys. Lett. 91 112912 | | [15] | Jeon S, Choi C J, Seong T Y and Hwang H 2001 Appl. Phys. Lett. 79 245 | | [16] | Liu C H, Juan P C, Chou Y H and Hsu H W 2012 Microelectron. Eng. 89 2 | | [17] | Nieh R E, Kang C S, Cho H J, Onishi K, Choi R, Krishnan S, Han J H, Kim Y H, Akbar M S and Lee J C 2003 IEEE Trans. Electron Devices 50 333 | | [18] | Wang L S, Xu J P, Liu L, Tang W M and Lai P T 2014 Appl. Phys. Express 7 061201 | | [19] | Wu Y H, Wu M L, Wu J R and Lin Y S 2010 Microelectron. Eng. 87 2423 | | [20] | Wang L S, Xu J P, Zhu S Y, Huang Y and Lai P T 2013 Appl. Phys. Lett. 103 092901 | | [21] | Marchiori C, Webb D J, Rossel C, Richter M, Sousa M, Gerl C, Germann R, Andersson C and Fompeyrine J 2009 J. Appl. Phys. 106 114112 | | [22] | Dalapati G K, Tong Y, Loh W Y, Mun H K and Cho B J 2007 IEEE Trans. Electron Devices 54 1831 | | [23] | Frank M M, Wilk G D, Starodub D, Gustafsson T, Garfunkel E, Chabal Y J, Grazul J and Muller D A 2005 Appl. Phys. Lett. 86 152904 | | [24] | Das T, Mahata C, Maiti C K, Dalapati G K, Chia C K, Chi D Z, Chiam S Y, Seng H L, Tan C C, Hui H K, Sutradhar G and Bose P K 2012 J. Electrochem. Soc. 159 G15 | | [25] | Liu C W, Xu J P, Liu L and Lu H H 2015 Chin. Phys. B 24 127304 | | [26] | Choi D, Harris J S, Warusawithana M and Schlom D G 2007 Appl. Phys. Lett. 90 243505 | | [27] | Terman L M 1962 Solid-State Electron. 5 285 | | [28] | Dalapati G K, Tong Y, Loh W Y, Mun H K and Cho B J 2007 Appl. Phys. Lett. 90 183510 |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
