Chin. Phys. Lett.  2017, Vol. 34 Issue (4): 047303    DOI: 10.1088/0256-307X/34/4/047303
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Interfacial and Electrical Properties of GaAs Metal-Oxide-Semiconductor Capacitor with ZrAlON as the Interfacial Passivation Layer
Han-Han Lu, Jing-Ping Xu**, Lu Liu
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074
Download: PDF(835KB)   PDF(mobile)(826KB)   HTML
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract The ZrTiON gate-dielectric GaAs metal-oxide-semiconductor (MOS) capacitors with or without ZrAlON as the interfacial passivation layer (IPL) are fabricated and their properties are investigated. The experimental results show that the GaAs MOS capacitor with the ZrAlON IPL exhibits better interfacial and electrical properties, including lower interface-state density ($1.14\times10^{12}$ cm$^{-2}$eV$^{-1})$, smaller gate leakage current ($6.82\times10^{-5}$ A/cm$^{2}$ at $V_{\rm fb}$+1 V), smaller capacitance equivalent thickness (1.5 nm), and larger $k$ value (26). The involved mechanisms lie in the fact that the ZrAlON IPL can effectively block the diffusion of Ti and O towards the GaAs surface, thus suppressing the formation of interfacial Ga-/As-oxides and As-As dimers, which leads to improved interfacial and electrical properties for the devices.
Received: 21 January 2017      Published: 21 March 2017
PACS:  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)  
  73.61.Ey (III-V semiconductors)  
Fund: Supported by the National Natural Science Foundation of China under Grant Nos 61176100, 61274112 and 61404055.
TRENDMD:   
Cite this article:   
Han-Han Lu, Jing-Ping Xu, Lu Liu 2017 Chin. Phys. Lett. 34 047303
URL:  
http://cpl.iphy.ac.cn/10.1088/0256-307X/34/4/047303       OR      http://cpl.iphy.ac.cn/Y2017/V34/I4/047303
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
Han-Han Lu
Jing-Ping Xu
Lu Liu
[1]Aoki T, Fukuhara N, Osada T, Sazawa H, Hata M and Inoue T 2014 Appl. Phys. Lett. 105 033513
[2]Wang L S, Liu L, Xu J P, Zhu S Y, Huang Y and Lai P T 2014 IEEE Trans. Electron Devices 61 742
[3]Aoki T, Fukuhara N, Osada T, Sazawa H, Hata M and Inoue T 2015 AIP Adv. 5 087149
[4]Das P S and Biswas A 2015 Appl. Phys. A Mater. Sci. Process. 118 967
[5]Liu C, Zhang Y M and Lv H L 2014 J. Appl. Phys. 116 222207
[6]Lim H, Kim S, Kim J R, Song J H, Lee N I, Jeong J K and Kim H J 2015 Phys. Status Solidi A 212 1911
[7]Ye P D, Wilk G D, Yang B, Kwo J, Chu S N G, Nakahara S, Gossmann H J L, Mannaerts J P, Hong M, Ng K K and Bude J 2003 Appl. Phys. Lett. 83 180
[8]Lee M K and Yen C F 2014 Appl. Phys. A: Mater. Sci. Process. 116 2051
[9]Dalapati G K, Wong T K S, Li Y, Chia C K, Das A, Mahata C, Gao H, Chattopadhyay S, Kumar M K, Seng H L, Maiti C K and Chi D Z 2012 Nanoscale Res. Lett. 7 99
[10]Lu H L, Sun L, Ding S J, Xu M, Zhang D W and Wang L K 2006 Appl. Phys. Lett. 89 152910
[11]Liu C, Zhang Y M, Zhang Y M and Lu H L 2013 Chin. Phys. B 22 076701
[12]Chang Y C, Merckling C, Penaud J, Lu C Y, Wang W E, Dekoster J, Meuris M, Caymax M, Heyns M, Kwo J and Hong M 2010 Appl. Phys. Lett. 97 112901
[13]Robertson J and Falabretti B 2006 J. Appl. Phys. 100 014111
[14]Gaskell J M, Jones A C, Aspinall H C, Taylor S, Taechakumput P, Chalker P R, Heys P N and Odedra R 2007 Appl. Phys. Lett. 91 112912
[15]Jeon S, Choi C J, Seong T Y and Hwang H 2001 Appl. Phys. Lett. 79 245
[16]Liu C H, Juan P C, Chou Y H and Hsu H W 2012 Microelectron. Eng. 89 2
[17]Nieh R E, Kang C S, Cho H J, Onishi K, Choi R, Krishnan S, Han J H, Kim Y H, Akbar M S and Lee J C 2003 IEEE Trans. Electron Devices 50 333
[18]Wang L S, Xu J P, Liu L, Tang W M and Lai P T 2014 Appl. Phys. Express 7 061201
[19]Wu Y H, Wu M L, Wu J R and Lin Y S 2010 Microelectron. Eng. 87 2423
[20]Wang L S, Xu J P, Zhu S Y, Huang Y and Lai P T 2013 Appl. Phys. Lett. 103 092901
[21]Marchiori C, Webb D J, Rossel C, Richter M, Sousa M, Gerl C, Germann R, Andersson C and Fompeyrine J 2009 J. Appl. Phys. 106 114112
[22]Dalapati G K, Tong Y, Loh W Y, Mun H K and Cho B J 2007 IEEE Trans. Electron Devices 54 1831
[23]Frank M M, Wilk G D, Starodub D, Gustafsson T, Garfunkel E, Chabal Y J, Grazul J and Muller D A 2005 Appl. Phys. Lett. 86 152904
[24]Das T, Mahata C, Maiti C K, Dalapati G K, Chia C K, Chi D Z, Chiam S Y, Seng H L, Tan C C, Hui H K, Sutradhar G and Bose P K 2012 J. Electrochem. Soc. 159 G15
[25]Liu C W, Xu J P, Liu L and Lu H H 2015 Chin. Phys. B 24 127304
[26]Choi D, Harris J S, Warusawithana M and Schlom D G 2007 Appl. Phys. Lett. 90 243505
[27]Terman L M 1962 Solid-State Electron. 5 285
[28]Dalapati G K, Tong Y, Loh W Y, Mun H K and Cho B J 2007 Appl. Phys. Lett. 90 183510
Related articles from Frontiers Journals
[1] Yuan Liu, Li Wang, Shu-Ting Cai, Ya-Yi Chen, Rongsheng Chen, Xiao-Ming Xiong, Kui-Wei Geng. Temperature Dependence of Electrical Characteristics in Indium-Zinc-Oxide Thin Film Transistors from 10K to 400K[J]. Chin. Phys. Lett., 2018, 35(9): 047303
[2] Bin-Xu, Jing-Ping Xu, Lu Liu, Yong Su. Improvements of Interfacial and Electrical Properties for Ge MOS Capacitor with LaTaON Gate Dielectric by Optimizing Ta Content[J]. Chin. Phys. Lett., 2018, 35(7): 047303
[3] Zhao-Zhao Hou, Gui-Lei Wang, Jia-Xin Yao, Qing-Zhu Zhang, Hua-Xiang Yin. Improvement of Operation Characteristics for MONOS Charge Trapping Flash Memory with SiGe Buried Channel[J]. Chin. Phys. Lett., 2018, 35(5): 047303
[4] Qi-Wen Zheng, Jiang-Wei Cui, Ying Wei, Xue-Feng Yu, Wu Lu, Diyuan Ren, Qi Guo. Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65nm NMOSFETs[J]. Chin. Phys. Lett., 2018, 35(4): 047303
[5] Ya-Yi Chen, Yuan Liu, Zhao-Hui Wu, Li Wang, Bin Li, Yun-Fei En, Yi-Qiang Chen. Low-Frequency Noise in Amorphous Indium Zinc Oxide Thin Film Transistors with Aluminum Oxide Gate Insulator[J]. Chin. Phys. Lett., 2018, 35(4): 047303
[6] Can Li, Cong-Wei Liao, Tian-Bao Yu, Jian-Yuan Ke, Sheng-Xiang Huang, Lian-Wen Deng. Concise Modeling of Amorphous Dual-Gate In-Ga-Zn-O Thin-Film Transistors for Integrated Circuit Designs[J]. Chin. Phys. Lett., 2018, 35(2): 047303
[7] Zhao-Zhao Hou, Gui-Lei Wang, Jin-Juan Xiang, Jia-Xin Yao, Zhen-Hua Wu, Qing-Zhu Zhang, Hua-Xiang Yin. Improved Operation Characteristics for Nonvolatile Charge-Trapping Memory Capacitors with High-$\kappa$ Dielectrics and SiGe Epitaxial Substrates[J]. Chin. Phys. Lett., 2017, 34(9): 047303
[8] Sheng-Kai Wang, Lei Ma, Hu-Dong Chang, Bing Sun, Yu-Yu Su, Le Zhong, Hai-Ou Li, Zhi Jin, Xin-Yu Liu, Hong-Gang Liu. Positive Bias Temperature Instability Degradation of Buried InGaAs Channel nMOSFETs with InGaP Barrier Layer and Al$_{2}$O$_{3}$ Dielectric[J]. Chin. Phys. Lett., 2017, 34(5): 047303
[9] Yuan Liu, Kai Liu, Rong-Sheng Chen, Yu-Rong Liu, Yun-Fei En, Bin Li, Wen-Xiao Fang. Total Ionizing Dose Radiation Effects in the P-Type Polycrystalline Silicon Thin Film Transistors[J]. Chin. Phys. Lett., 2017, 34(1): 047303
[10] Yi-Tao He, Ming Qiao, Lu Li, Gang Dai, Bo Zhang, Zhao-Ji Li. A Lateral Regulator Diode with Field Plates for Light-Emitting-Diode Lighting[J]. Chin. Phys. Lett., 2016, 33(09): 047303
[11] Qi-Wen Zheng, Jiang-Wei Cui, Hang Zhou, De-Zhao Yu, Xue-Feng Yu, Qi Guo. Hot-Carrier Effects on Total Dose Irradiated 65nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors[J]. Chin. Phys. Lett., 2016, 33(07): 047303
[12] Lan-Feng Tang, Hai Lu, Fang-Fang Ren, Dong Zhou, Rong Zhang, You-Dou Zheng, Xiao-Ming Huang,. Electrical Instability of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors under Ultraviolet Illumination[J]. Chin. Phys. Lett., 2016, 33(03): 047303
[13] SHEN Hua-Jun, TANG Ya-Chao, PENG Zhao-Yang, DENG Xiao-Chuan, BAI Yun, WANG Yi-Yu, LI Cheng-Zhan, LIU Ke-An, LIU Xin-Yu. Fabrication and Characterization of 1700 V 4H-SiC Vertical Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors[J]. Chin. Phys. Lett., 2015, 32(12): 047303
[14] XIANG Lan-Yi, YING Jun, HAN Jin-Hua, WANG Wei, XIE Wen-Fa. Solution-Processed High Mobility Top-Gate N-Channel Polymer Field-Effect Transistors[J]. Chin. Phys. Lett., 2015, 32(09): 047303
[15] LIU Yuan, WU Wei-Jing, QIANG Lei, WANG Lei, EN Yun-Fei, LI Bin. Temperature-Dependent Drain Current Characteristics and Low Frequency Noises in Indium Zinc Oxide Thin Film Transistors[J]. Chin. Phys. Lett., 2015, 32(08): 047303
Viewed
Full text


Abstract