| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Observation of an Even–Odd Asymmetric Transport in High Landau Levels |
| Guang-Tong Liu1**, Yu-Ying Zhu1, Qin Wang1, Yuan Pang1, Jie Fan1, Xiu-Nian Jing1,2, Zhong-Qing Ji1, Chang-Li Yang1,2, Li Lu1,2, Rui-Rui Du2,3, L. N. Pfeiffer4, K. W. West4 |
1Daniel Chee Tsui Laboratory, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190
2Collaborative Innovation Center of Quantum Matter, Beijing 100871
3International Center for Quantum Materials, Peking University, Beijing 100871
4Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
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Abstract Magnetotransport experiments including tilt fields are performed on ultrahigh mobility L-shaped Hall-bar samples of GaAs/AlGaAs quantum wells. The low-temperature longitudinal resistivity ($\rho_{xx}$) data demonstrate that a striking even–odd asymmetric transport exists along the [1$\overline{1}$0] direction at half filling in $N\geq 2$ high Landau levels. Although the origin for the peculiar even–odd asymmetry remains unclear, we propose that the coupling strength between electrons within the same Landau level and between the neighboring two Landau levels should be considered in future studies. The tilt field data show that the in-plane field can suppress the formation of both bubble and stripe phases.
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Received: 23 November 2016
Published: 07 March 2017
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| Fund:Supported by the National Basic Research Program of China under Grant Nos 2014CB920904 and 2013CB921702, the National Natural Science Foundation of China under Grant Nos 11174340, 11174357, 91221203 and 91421303, the Strategic Priority Research Program B of the Chinese Academy of Sciences under Grant No XDB07010100, the Gordon and Betty Moore Foundation through the EPiQS initiative under Grant No GBMF4420, and the National Science Foundation of MRSEC under Grant No DMR-1420541. |
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Issue Date: 07 March 2017
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