FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Controlling the Goos–Hänchen Shift via Incoherent Pumping Field and Electron Tunneling in the Triple Coupled InGaAs/GaAs Quantum Dots |
R. Nasehi1**, S. H. Asadpour2, H. Rahimpour Soleimani2, M. Mahmoudi1 |
1Department of Physics, University of Zanjan, University Blvd., Zanjan 45371-38791, Iran
2Department of Physics, University of Guilan, Rasht, Iran |
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Cite this article: |
R. Nasehi, S. H. Asadpour, H. Rahimpour Soleimani et al 2016 Chin. Phys. Lett. 33 014204 |
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Abstract We study the controlling of the Goos–Hänchen (GH) shifts in reflected and transmitted light beams in the triple coupled InGaAs/GaAs quantum dot (QD) nanostructures with electron tunneling and incoherent pumping field. It is shown that the lateral shift can become either large negative or large positive, which can be controlled by the electron tunneling and the rate of incoherent pump field in different incident angles. It is also demonstrated that the properties of the GH shifts are strongly dependent on the probe absorption beam of the intracavity medium due to the switching from superluminal light propagation to subluminal behavior or vice versa. Our suggested system can be considered as a new theoretical method for developing a new nano-optoelectronic sensor.
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Received: 16 July 2015
Published: 29 January 2016
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PACS: |
42.50.Gy
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(Effects of atomic coherence on propagation, absorption, and Amplification of light; electromagnetically induced transparency and Absorption)
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85.35.Be
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(Quantum well devices (quantum dots, quantum wires, etc.))
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78.67.Hc
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(Quantum dots)
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Abstract
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