| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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A Quasi-3D Threshold Voltage Model for Dual-Metal Quadruple-Gate MOSFETs |
| Visweswara Rao Samoju1, Satyabrata Jit2, Pramod Kumar Tiwari1** |
1Department of Electronics & Communication Engineering, National Institute of Technology, Rourkela 769008, India
2Department of Electronics Engineering, Indian Institute of Technology (BHU), Varanasi 221005, India
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| Cite this article: |
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Visweswara Rao Samoju, Satyabrata Jit, Pramod Kumar Tiwari 2014 Chin. Phys. Lett. 31 128502 |
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Abstract A threshold voltage model for dual-metal quadruple-gate (DMQG) metal-oxide-semiconductor field effect transistors (MOSFETs) is presented by using the virtual-cathode potential formulated from the quasi-3D scaling equation adopting the equivalent number of gates concept. The threshold voltage of the DMQG MOSFET is formulated analytically for different length ratios of control and screen gates at different channel lengths. Moreover, the drain induced barrier lowering of the DMQG MOSFET is also analyzed and compared with the same quadruple-gate MOSFET. The analytical model results are compared with the 3D ATLAS simulation data to validate the derived model.
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Published: 12 January 2015
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| PACS: |
85.30.Tv
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(Field effect devices)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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