Chin. Phys. Lett.  2013, Vol. 30 Issue (8): 088503    DOI: 10.1088/0256-307X/30/8/088503
CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
A High Figure-of-Merit SOI MOSFET with a Double-Sided Charge Oxide-Trench
FAN Yuan-Hang, LUO Xiao-Rong**, WANG Pei, ZHOU Kun, ZHANG Bo, LI Zhao-Ji
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054
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FAN Yuan-Hang, LUO Xiao-Rong, WANG Pei et al  2013 Chin. Phys. Lett. 30 088503
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Abstract A novel silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistor (MOSFET) with a high figure of merit (FOM) is proposed. The device features a double-sided charge oxide-trench (DCT) and a trench gate extended to the buried oxide. First, the oxide trench causes multiple-dimensional depletion in the drift region, which not only improves the electric field (E-field) strength, but also enhances the reduced surface field effect. Second, self-adaptive charges are collected in the DCT, which enhances the E-field strength of the trench oxide. Third, the oxide trench folds the drift region along the vertical direction, reducing the device cell pitch. Fourth, one side of the DCT regions acts as the body contact of p-well to reduce cell pitch and specific on-resistance (Ron, sp) further. Compared with a trench gate lateral double-diffused MOSFET, the DCT MOSFET increases the breakdown voltage (BV) from 53 V to 158 V at the same cell pitch of 3.5 μm, or reduces the cell pitch by 60% and Ron, sp by 70% at the same BV. The FOM (FOM=BV2/Ron, sp) of the proposed structure is 23 MW/cm2.
Received: 23 May 2013      Published: 21 November 2013
PACS:  85.30.De (Semiconductor-device characterization, design, and modeling)  
  85.30.Tv (Field effect devices)  
  84.70.+p (High-current and high-voltage technology: power systems; power transmission lines and cables)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/30/8/088503       OR      https://cpl.iphy.ac.cn/Y2013/V30/I8/088503
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Articles by authors
FAN Yuan-Hang
LUO Xiao-Rong
WANG Pei
ZHOU Kun
ZHANG Bo
LI Zhao-Ji
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[10] Luo X R et al 2011 Chin. Phys. B 20 028501
[11] Wang Z G et al 2012 IEEE Electron Device Lett. 33 703
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