Chin. Phys. Lett.  2012, Vol. 29 Issue (12): 127302    DOI: 10.1088/0256-307X/29/12/127302
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Laser-Induced Indium-Diffusion into Cadmium Sulfide Thin Film for Solar Cell Applications
KIM Nam-Hoon, MYUNG Kuk Do, LEE Woo-Sun**
Department of Electrical Engineering, Chosun University, Gwangju 501-759, Republic of Korea
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KIM Nam-Hoon, MYUNG Kuk Do, LEE Woo-Sun 2012 Chin. Phys. Lett. 29 127302
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Abstract Laser-induced diffusion is employed to dope indium (In) into sputtering-deposited cadmium sulfide (CdS) thin films. The increased optical band gap energy from 2.52 to 2.60 eV with maintenance of high optical transmittance about 60 nm in the 200-nm-thick films, the enhanced mobility over 42.5 cm2/V?s, and the decreased resistivity to 1.42×10?3 Ω?cm are successfully obtained to be advantageous for a window layer in solar cells.
Received: 08 August 2012      Published: 04 March 2013
PACS:  73.61.Ga (II-VI semiconductors)  
  78.66.Hf (II-VI semiconductors)  
  68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.)  
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http://cpl.iphy.ac.cn/10.1088/0256-307X/29/12/127302       OR      http://cpl.iphy.ac.cn/Y2012/V29/I12/127302
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KIM Nam-Hoon
MYUNG Kuk Do
LEE Woo-Sun
[1] Atay F, Bilgin V, Akyuz I and Kose S J and Akiyama O 2003 Mat. Sci. Semicon. Proc. 6 197
[2] Kim N H, Ryu S H, Noh H S and Lee W S 2012 Mat. Sci. Semicon. Proc. 15 125
[3] Jaber A Y, Alamri S N and Aida M S 2012 Thin Solid Films 520 3485
[4] Podestà A, Armani N, Salviati G, Romeo N, Bosio A, Prato M 2006 Thin Solid Films 511-512 448
[5] Ristova M and Ristov M 1998 Sol. Energy Mater. Sol. Cells 53 95
[6] Orlianges J C et al 2011 Thin Solid Films 519 7611
[7] Lee J 2004 Thin Solid Films 451-452 170
[8] Palafox A et al 1998 Sol. Energy Mater. Sol. Cells 55 31
[9] Castillo S J et al 2000 Thin Solid Films 373 10
[10] Dzhafarov T D, Ongul F and Yuksel S A 2010 Vacuum 84 310
[11] Becerril M, Vigil-Galán O, Contreras-Puente G and Zelaya-Angel O 2011 Rev. Mex. Fis. 57 304
[12] Kim N H, Myung K D, Cho G B and Lee W S 2012 J. Korean Phys. Soc. 60 425
[13] Kim N H, Park J S and Lee W S 2011 J. Korean Phys. Soc. 59 2286
[14] Gnatyuk V A, Aoki T, Hatanaka Y and Vlasenko O I 2006 Phys. Status Solidi C 3 1221
[15] Hashimoto Y, Kohara N, Negami T, Nishitani N and Wada T 1998 Sol. Energy Mater. Sol. Cells 50 71
[16] Rakhshani A E and Al-Azab A S 2000 J. Phys.: Condens. Matter 12 8745
[17] Moutinho H R et al 2003 Thin Solid Films 436 175
[18] Khallaf H, Chai G, Lupan O, Chow L, Park S and Schulte A 2009 Appl. Surf. Sci. 255 4129
[19] Kaur I, Pandya D K and Chopra K L 1980 J. Electrochem. Soc. 127 943
[20] Yeh C Y, Lu Z W, Froyen S and Zunger A 1992 Phys. Rev. B 46 10086
[21] Lee J H, Yi J S, Yang K J, Park J H and Oh R D 2003 Thin Solid Films 431-432 344
[22] Lee S W, An S Y, Kim S J and Kim C S 2006 J. Korean Phys. Soc. 48 75
[23] Khallaf H, Oladeji I O and Chow L 2008 Thin Solid Films 516 5967
[24] Kim S Y, Kim D S, Ahn B T and Im H B 1993 Thin Solid Films 229 227
[25] Devi R, Purkayastha P, Kalita P K and Sarma B K 2007 Bull. Mater. Sci. 30 123
[26] Abu-Safe H H, Hossain M, Naseem M, Brown W and Al-Dhafiri A 2004 J. Electron. Mater. 33 128
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