Chin. Phys. Lett.  2012, Vol. 29 Issue (12): 127201    DOI: 10.1088/0256-307X/29/12/127201
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Onset for the Electron Velocity Overshoot in Indium Nitride
Clóves G. Rodrigues**
Departamento de Matemática e Física, Pontifícia Universidade Católica de Goiás CP 86, 74605-010 Goiania, Goiás, Brazil
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Clóves G. Rodrigues 2012 Chin. Phys. Lett. 29 127201
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Abstract A theoretical study on the electron drift velocity and electron nonequilibrium temperature of indium nitride (InN) is presented. It is based on a nonlinear quantum kinetic theory which provides a description of the dissipative phenomena developing in the system. The ultrafast time evolution of the electron drift velocity and electron nonequilibrium temperature is obtained, and overshoot effects are evidenced on both of them. The overshoot onsets are shown to occur at 4 kV/cm, electric field intensity which is considerably smaller than those recently derived by resorting to Monte Carlo simulations.
Received: 13 January 2012      Published: 04 March 2013
PACS:  72.10.-d (Theory of electronic transport; scattering mechanisms)  
  78.55.Cr (III-V semiconductors)  
  05.70.Ln (Nonequilibrium and irreversible thermodynamics)  
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http://cpl.iphy.ac.cn/10.1088/0256-307X/29/12/127201       OR      http://cpl.iphy.ac.cn/Y2012/V29/I12/127201
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Clóves G. Rodrigues
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