| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Theoretical Revision and Experimental Comparison of Quantum Yield for Transmission-Mode GaAlAs/GaAs Photocathodes |
| SHI Feng1,2,3, ZHANG Yi-Jun1, CHENG Hong-Chang2,3, ZHAO Jing1, XIONG Ya-Juan1, CHANG Ben-Kang1**
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1Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094
2North Night Vision Technology Group Co., LTD, Xi'an 710056
3Key Laboratory of Low Light Level Technology of COSTIND, Xi'an 710065
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| Cite this article: |
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SHI Feng, ZHANG Yi-Jun, CHENG Hong-Chang et al 2011 Chin. Phys. Lett. 28 044204 |
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Abstract The quantum yield formula for uniform-doping GaAlAs/GaAs transmission-mode photocathodes is revised by taking into account the light absorption in the window layer. By using the revised quantum yield formula, the domestic and ITT's experimental quantum yield curves are fitted and the fitted curves match well with the experimental curves. In addition, the fit results show that the integral sensitivity and quantum yield of domestic image intensifier tube has achieved 2130 µA/lm and 45%, nearly reaching ITT's third generation level in 2002, whereas the discrepancy in cathode performance is mainly embodied in the electron diffusion length and back interface recombination velocity.
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| Keywords:
42.70.Gi
71.55.Eq
72.10.-d
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Received: 24 September 2010
Published: 29 March 2011
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| PACS: |
42.70.Gi
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(Light-sensitive materials)
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71.55.Eq
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(III-V semiconductors)
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72.10.-d
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(Theory of electronic transport; scattering mechanisms)
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