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PRESSURE DEPENDENCE OF DEEP LEVELS IN Gap |
| REN Shang-yuan |
| Department of Physics, University of Science and Technology of China, Hefei |
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| Cite this article: |
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REN Shang-yuan 1985 Chin. Phys. Lett. 2 93-94 |
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Abstract The pressure dependence of deep energy levels associated with substitutional point defects in GaP is investigated using an approach proposed before. A deep level can be driven out of the gap into the valence bands, if this level is caused by a P-substitutional defect and located sufficiently close to the valence band maxim in the unpressurized solid. No deep level can be driven into the gap from the conduction bands by the pressure. The theoretical calculations are in good agreement with the experimental results.
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Published: 01 February 1985
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