Chin. Phys. Lett.  2021, Vol. 38 Issue (9): 097201    DOI: 10.1088/0256-307X/38/9/097201
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Simultaneous Optimization of Power Factor and Thermal Conductivity towards High-Performance InSb-Based Thermoelectric Materials
Wang Li , Tian Xu , Zheng Ma , Abubakar-Yakubu Haruna, Qing-Hui Jiang , Yu-Bo Luo*, and Jun-You Yang*
State Key Laboratory of Materials Processing and Die & Mould Technology, Huazhong University of Science and Technology, Wuhan 430074, China
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Wang Li , Tian Xu , Zheng Ma  et al  2021 Chin. Phys. Lett. 38 097201
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Abstract Thermoelectric performance of InSb is restricted by its low Seebeck coefficient and high thermal conductivity. Here, CuCl is employed to optimize simultaneously the electrical and thermal transport properties of InSb. The substitution of Cl for Sb results in enhanced electron effective mass, leading to high Seebeck coefficient of $-159.9$ µV/K and high power factor of 31.5 µW$\cdot$cm$^{-1}$$\cdot$K$^{-2}$ at 733 K for InSb + 5 wt% CuCl sample. In addition, CuCl doping creates hierarchical architectures composed of Cu$_{9}$In$_{4}$, Sb, Cu$_{2}$Sb in InSb, leading to a strengthened phonon scattering in a wide wavelength (i.e., nano to meso scale), thus a low lattice thermal conductivity of 2.97 W$\cdot$m$^{-1}$$\cdot$K$^{-1}$ at 733 K in InSb + 5 wt% CuCl. As a result, a maximum $ZT$ of 0.77 at 733 K has been achieved for the InSb + 5 wt% CuCl sample, increasing by $\sim $250% compared to pristine InSb.
Received: 01 August 2021      Published: 02 September 2021
PACS:  72.20.Pa (Thermoelectric and thermomagnetic effects)  
  61.72.uj (III-V and II-VI semiconductors)  
  66.70.Df (Metals, alloys, and semiconductors)  
Fund: Supported by the National Natural Science Foundation of China (Grant Nos. 52002137, 51772109, 51872102, and 51802070), the Fundamental Research Funds for the Central Universities (Grant Nos. 2021XXJS008 and 2018KFYXKJC002), and Graduates' Innovation Fund of Huazhong University of Science and Technology (Grant No. 2020yjsCXCY022).
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https://cpl.iphy.ac.cn/10.1088/0256-307X/38/9/097201       OR      https://cpl.iphy.ac.cn/Y2021/V38/I9/097201
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Articles by authors
Wang Li 
Tian Xu 
Zheng Ma 
Abubakar-Yakubu Haruna
Qing-Hui Jiang 
Yu-Bo Luo
and Jun-You Yang
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