| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Room-Temperature Processed Amorphous ZnRhCuO Thin Films with p-Type Transistor and Gas-Sensor Behaviors |
| Bojing Lu1, Rumin Liu1, Siqin Li1, Rongkai Lu1, Lingxiang Chen2*, Zhizhen Ye1,2, and Jianguo Lu1,2* |
1State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
2Key Laboratory for Biomedical Engineering of Ministry of Education, College of Biomedical Engineering and Instrument Science, Zhejiang University, Hangzhou 310027, China
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| Cite this article: |
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Bojing Lu, Rumin Liu, Siqin Li et al 2020 Chin. Phys. Lett. 37 098501 |
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Abstract We examine an amorphous oxide semiconductor (AOS) of ZnRhCuO. The $a$-ZnRhCuO films are deposited at room temperature, having a high amorphous quality with smooth surface, uniform thickness and evenly distributed elements, as well as a high visible transmittance above 87% with a wide bandgap of 3.12 eV. Using $a$-ZnRhCuO films as active layers, thin-film transistors (TFTs) and gas sensors are fabricated. The TFT behaviors demonstrate the p-type nature of $a$-ZnRhCuO channel, with an on-to-off current ratio of $\sim$$1\times 10^{3}$ and field-effect mobility of 0.079 cm$^{2}$V$^{-1}$s$^{-1}$. The behaviors of gas sensors also prove that the $a$-ZnRhCuO films are of p-type conductivity. Our achievements relating to p-type $a$-ZnRhCuO films at room temperature with TFT devices may pave the way to practical applications of AOSs in transparent flexible electronics.
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Received: 16 May 2020
Published: 01 September 2020
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| PACS: |
85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.30.Tv
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(Field effect devices)
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73.61.Jc
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(Amorphous semiconductors; glasses)
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81.05.Gc
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(Amorphous semiconductors)
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| Fund: Supported by the National Natural Science Foundation of China (Grant No. 51741209), and the Zhejiang Provincial Natural Science Foundation of China (Grant Nos. LR16F040001 and LGG19F040005). |
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