Performance Improvement in Hydrogenated Few-Layer Black Phosphorus Field-Effect Transistors
He-Mei Zheng, Shun-Ming Sun, Hao Liu, Ya-Wei Huan, Jian-Guo Yang, Bao Zhu, Wen-Jun Liu** , Shi-Jin Ding**
State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433
Abstract ：A capping layer for black phosphorus (BP) field-effect transistors (FETs) can provide effective isolation from the ambient air; however, this also brings inconvenience to the post-treatment for optimizing devices. We perform low-temperature hydrogenation on Al$_{2}$O$_{3}$ capped BP FETs. The hydrogenated BP devices exhibit a pronounced improvement of mobility from 69.6 to 107.7 cm$^{2}$v$^{-1}$s$^{-1}$, and a dramatic decrease of subthreshold swing from 8.4 to 2.6 V/dec. Furthermore, high/low frequency capacitance–voltage measurements suggest reduced interface defects in hydrogenated BP FETs. This could be due to the passivation of interface traps at both Al$_{2}$O$_{3}$/BP and BP/SiO$_{2}$ interfaces with hydrogen revealed by secondary ion mass spectroscopy.
收稿日期: 2018-08-20
出版日期: 2018-11-23
:
73.63.Bd
(Nanocrystalline materials)
73.22.-f
(Electronic structure of nanoscale materials and related systems)
85.30.Tv
(Field effect devices)
85.35.-p
(Nanoelectronic devices)
引用本文:
. [J]. 中国物理快报, 2018, 35(12): 127302-.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/35/12/127302
或
https://cpl.iphy.ac.cn/CN/Y2018/V35/I12/127302
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2018, Vol. 35 
