Band Structure and Optical Gain of InGaAs/GaAsBi Type-II Quantum Wells Modeled by the $k\cdot p$ Model
Chang Wang1,2,3, Wenwu Pan2,3, Konstantin Kolokolov4, Shumin Wang1,2,5**
1Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 2School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210 3University of Chinese Academy of Sciences, Beijing 100190 4Faculty of Physics, M. V. Lomonosov Moscow State University, Moscow 119991, Russia 5Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg 41296, Sweden
Abstract：Optical gains of type-II InGaAs/GaAsBi quantum wells (QWs) with W, N, and M shapes are analyzed theoretically for near-infrared laser applications. The bandgap and wave functions are calculated using the self-consistent $k\cdot p$ Hamiltonian, taking into account valence band mixing and the strain effect. Our calculations show that the M-shaped type-II QWs are a promising structure for making 1.3 μm lasers at room temperature because they can easily be used to obtain 1.3 μm for photoluminescence with a proper thickness and have large wave-function overlap for high optical gain.
2018, Vol. 35 
