Effects of MgO Thickness and Roughness on Perpendicular Magnetic Anisotropy in MgO/CoFeB/Ta Multilayers
Yi Liu1, Tao Yu1, Zheng-Yong Zhu2, Hui-Cai Zhong3, Kai-Gui Zhu1,4**
1School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191 2Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 3Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 4Key Laboratory of Micro-nano Measurement-Manipulation and Physics (Ministry of Education), Beihang University, Beijing 100191
Abstract：The dependence of perpendicular magnetic anisotropy (PMA) on the barrier layer MgO thickness in MgO/CoFeB /Ta multilayers is investigated. The results show that the strongest PMA occurs in a small window of about 2–4 nm with the increase of MgO thickness from 1–10 nm. The crystalline degree of MgO and the change of interatomic distance along the out-of-plane direction may be the main reasons for the change of PMA in these multilayers. Moreover, the roughnesses of 2- and 4-nm-thick MgO samples are 3.163 and 1.8 nm, respectively, and both the samples show PMA. These results could be used to tune the magnetic characteristic of the ultra thin CoFeB film for future applications in perpendicular magnetic devices.
(Magnetic annealing and temperature-hysteresis effects)
引用本文:
. [J]. 中国物理快报, 2016, 33(10): 107804-107804.
Yi Liu, Tao Yu, Zheng-Yong Zhu, Hui-Cai Zhong, Kai-Gui Zhu. Effects of MgO Thickness and Roughness on Perpendicular Magnetic Anisotropy in MgO/CoFeB/Ta Multilayers. Chin. Phys. Lett., 2016, 33(10): 107804-107804.
2016, Vol. 33 
