中国物理快报  2016, Vol. 33 Issue (09): 98101-098101    DOI: 10.1088/0256-307X/33/9/098101
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Effect of In$_{x}$Ga$_{1-x}$As Interlayer on Surface Morphology and Optical Properties of GaSb/InGaAs Type-II Quantum Dots Grown on InP (100) Substrates
Yu-Long Chen1,2, You Gao1, Hong Chen2**, Hui Zhang3**, Miao He1,3**, Shu-Ti Li1, Shu-Wen Zheng1
1Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631
2Key Laboratory for Renewable Energy, Chinese Academy of Sciences, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condense Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190
3College of Physics and Optoelectric Engineering, Guangdong University of Technology, Guangzhou 510006