1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 2University of Chinese Academy of Sciences, Beijing 100049
Abstract：On the basis of a detailed discussion of the development of total ionizing dose (TID) effect model, a new commercial-model-independent TID modeling approach for partially depleted silicon-on-insulator metal-oxide-semiconductor field effect transistors is developed. An exponential approximation is proposed to simplify the trap charge calculation. Irradiation experiments with $^{60}$Co gamma rays for IO and core devices are performed to validate the simulation results. An excellent agreement of measurement with the simulation results is observed.
McLean F B and Oldham T R 1987 Basic Mechanisms of Radiation Effects in Electronic Materials and Devices Technical Report (Washington: Harry Diamond Laboratories) p 20305
2016, Vol. 33 
