Programmable Logic Based on Large Magnetoresistance of Germanium
Jiao-Jiao Chen1,2 , Hong-Guang Piao1,2 , Zhao-Chu Luo1,2 , Cheng-Yue Xiong1,2 , Xiao-Zhong Zhang1,2**
1 Key Laboratory of Advanced Materials, School of Materials Science and Engineering, Tsinghua University, Beijing 1000842 National Center for Electron Microscopy in Beijing, Tsinghua University, Beijing 100084
Abstract ：We find extremely large low-magnetic-field magnetoresistance ($\sim$350% at 0.2 T and $\sim$180% at 0.1 T) in germanium at room temperature and the magnetoresistance is highly sensitive to the surface roughness. This unique magnetoelectric property is applied to fabricate logic architecture which could perform basic Boolean logic including AND, OR, NOR and NAND. Our logic device may pave the way for a high performance microprocessor and may make the germanium family more advanced.
收稿日期: 2015-11-30
出版日期: 2016-04-29
:
75.47.Pq
(Other materials)
72.20.Jv
(Charge carriers: generation, recombination, lifetime, and trapping)
73.40.Sx
(Metal-semiconductor-metal structures)
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2016, Vol. 33 
