Tunneling Negative Magnetoresistance via $\delta$ Doping in a Graphene-Based Magnetic Tunnel Junction
Jian-Hui Yuan1** , Ni Chen1 , Hua Mo1 , Yan Zhang1 , Zhi-Hai Zhang2**
1 Department of Physics, Guangxi Medical University, Nanning 5300212 School of Physics and Electronics, Yancheng Teachers University, Yancheng 224051
Abstract ：We investigate the tunneling magnetoresistance via $\delta$ doping in a graphene-based magnetic tunnel junction in detail. It is found that the transmission probability and the conductance oscillates with the position and the aptitude of the $\delta$ doping. Also, both the transmission probability and the conductance at the parallel configuration are suppressed by the magnetic field more obviously than that at the antiparallel configuration, which implies a large negative magnetoresistance for this device. The results show that the negative magnetoresistance of over 300% at $B=1.0$ T is observed by choosing suitable doped parameters, and the temperature plays an important role in the magnetoresistance. Thus it is possible to open a way to effectively manipulate the magnetoresistance devices, and to make a type of magnetoresistance device by controlling the structural parameter of the $\delta$ doping.
收稿日期: 2015-10-23
出版日期: 2016-03-31
:
73.23.-b
(Electronic transport in mesoscopic systems)
03.65.Pm
(Relativistic wave equations)
73.43.Cd
(Theory and modeling)
75.70.Ak
(Magnetic properties of monolayers and thin films)
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2016, Vol. 33 
