1Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044 2Key Laboratory of Luminescence and Optical Information (Ministry of Education), Beijing Jiaotong University, Beijing 100044
Abstract：We present a systematic analysis of the exciton-recombination zone within all-quantum-dot (QD) multilayer films using sensing QD layers in QD-based light-emitting diodes (QLEDs), and demonstrate the all-QD multilayer films with different sequences of layers prepared by inserting a sensing blue QD layer denoted as B at various positions within four red QD multilayers denoted as R. We also use different hole transporting layers (PVK, CBP as well as poly-TPD) to prevent the formation of leakage current and to improve the luminance. The results show that the total EL emission is mostly at the fourth (60%) and fifth (40%) QD monolayers, adjacent to ITO. This presents both decreasing current density and increasing brightness with different hole transporting layers, thus resulting in more efficient performance.
(Charge carriers: generation, recombination, lifetime, trapping, mean free paths)
引用本文:
. [J]. 中国物理快报, 2016, 33(03): 37301-037301.
Hui-Li Yin, Su-Ling Zhao, Zheng Xu, Li-Zhi Sun. Light-Emitting Diodes Based on All-Quantum-Dot Multilayer Films and the Influence of Various Hole-Transporting Layers on the Performance. Chin. Phys. Lett., 2016, 33(03): 37301-037301.
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2016, Vol. 33 
