Structural Design and Experiment of Narrow-Band Response GaAlAs Photocathodes
Jing Zhao1** , Jian Zhang1 , Cui Qin1 , Hui-Long Yu1 , Yi-Jun Zhang2 , Xin-Long Chen2 , Ben-Kang Chang2
1 School of Communication Engineering, Nanjing Institute of Technology, Nanjing 2111672 Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094
Abstract ：To obtain the peak response at 532 nm, narrow-band response GaAlAs photocathodes with two GaAlAs active layers of different aluminum compositions are designed in consideration of the maximum absorptivity and quantum efficiency. The transmission-mode and the corresponding reflective-mode photocathodes are grown by metalorganic chemical vapor deposition. The results indicate that the peak response and the cut-off wavelength occur at 532 nm for the two kinds of photocathodes respectively. The response of the reflection-mode photocathode is an order of magnitude higher than that of the transmission-mode photocathode, whereas the better growth quality and the thicker second GaAlAs active layer can improve the transmission-mode response.
收稿日期: 2015-09-15
出版日期: 2016-02-26
:
78.40.Fy
(Semiconductors)
79.60.Dp
(Adsorbed layers and thin films)
78.67.Pt
(Multilayers; superlattices; photonic structures; metamaterials)
引用本文:
. [J]. 中国物理快报, 2016, 33(02): 27801-027801.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/33/2/027801
或
https://cpl.iphy.ac.cn/CN/Y2016/V33/I02/27801
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2016, Vol. 33 
