中国物理快报  2015, Vol. 32 Issue (11): 117204-117204    DOI: 10.1088/0256-307X/32/11/117204
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Improvement of Metal-Graphene Ohmic Contact Resistance in Bilayer Epitaxial Graphene Devices
HE Ze-Zhao1,2, YANG Ke-Wu1,2, YU Cui2, LI Jia2, LIU Qing-Bin2, LU Wei-Li2, FENG Zhi-Hong2**, CAI Shu-Jun2
1School of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300130
2National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051