中国物理快报  2015, Vol. 32 Issue (09): 97101-097101    DOI: 10.1088/0256-307X/32/9/097101
  本期目录 | 过刊浏览 | 高级检索 |
Effects of Si δ-Doping Condition and Growth Interruption on Electrical Properties of InP-Based High Electron Mobility Transistor Structures
ZHOU Shu-Xing1, QI Ming1**, AI Li-Kun1, XU An-Huai1, WANG Li-Dan2, DING Peng2, JIN Zhi2
1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
2Microwave Devices and Integrated Circuits Department, Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029