Single- and Few-Electron States in Deformed Topological Insulator Quantum Dots
LI Jian** , ZHANG Dong
SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Abstract ：We theoretically investigate the single- and few-electron states in deformed HgTe quantum dots (QDs) with an inverted band structure using the full configuration interaction method. For the circular and deformed QD, it is found that the energy of edge states is robust against the shape from the circular QD in various elliptic ones. For the few electron states, electrons will firstly fill the edge states localized at the short axis, then the states localized at the long axis of the QD before filling the bulk states. The filling of the edge states can be controlled by tuning the dot size or the deformation of the geometry of the HgTe QD, respectively.
收稿日期: 2015-01-26
出版日期: 2015-04-30
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2015, Vol. 32 
