Magneto-Transport Properties of Insulating Bulk States in Bi(111) Films
PANG Fei**
Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872
Abstract ：Magneto-transport properties of insulating bulk states in Bi(111) films are systematically investigated under the parallel field (B || ). We find that the magnetotransport of the B || field is a more powerful tool to distinguish the bulk states and the surface states. A large magnetoresistance (MR) up to 20% in the B || field is induced by the insulating bulk states for the suppression of the backward scattering. With the increasing thickness, a positive MR(B || ) from magnetic induced boundary scattering appears in the semimetal films. As the thickness is reduced to 10 nm, the positive MR(B || ) is induced by weak anti-localization from the surface states.
出版日期: 2015-01-20
:
74.25.F-
(Transport properties)
71.70.Ej
(Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect)
72.15.Rn
(Localization effects (Anderson or weak localization))
73.20.-r
(Electron states at surfaces and interfaces)
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2015, Vol. 32 
