中国物理快报  2014, Vol. 31 Issue (07): 77203-077203    DOI: 10.1088/0256-307X/31/7/077203
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Transport and Capacitance Properties of Charge Density Wave in Few-Layer 2H–TaS2 Devices
CAO Yu-Fei1, CAI Kai-Ming1, LI Li-Jun2, LU Wen-Jian2, SUN Yu-Ping2, WANG Kai-You1**
1The State Key Laboratory of Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031