Single-ZnO-Nanobelt-Based Single-Electron Transistors
JI Xiao-Fan1,2 , XU Zheng1** , CAO Shuo2 , QIU Kang-Sheng2 , TANG Jing2 , ZHANG Xi-Tian3 , XU Xiu-Lai2**
1 Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 1000442 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 1001903 Heilongjiang Key Laboratory for Low-Dimensional System and Mesoscopic Physics, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025
Abstract ：We fabricate single electron transistors based on a single ZnO nanobelt using standard micro-fabrication techniques. The transport properties of the devices are characterized at room temperature and at low temperature (4.2 K). At room temperature, the source-drain current increases linearly as the bias voltage increases, indicating a good ohmic contact in the transistors. At 4.2 K, a Coulomb blockade regime is observed up to a bias voltage of a few millivolts. With scanning the back gate voltage, Coulomb oscillations can be clearly resolved with a period around 1 V. From the oscillations, the charging energy for the single electron transistor is calculated to be about 10 meV, which suggests that confined quantum dots exist with sizes around 35 nm in diameter. The irregular Coulomb diamonds are observed due to the multi-tunneling junctions between dots in the nanobelt.
出版日期: 2014-05-26
:
73.23.Hk
(Coulomb blockade; single-electron tunneling)
72.80.Ey
(III-V and II-VI semiconductors)
85.35.Gv
(Single electron devices)
引用本文:
. [J]. 中国物理快报, 2014, 31(06): 67303-067303.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/31/6/067303
或
https://cpl.iphy.ac.cn/CN/Y2014/V31/I06/67303
[1] Ozgur U et al 2005 J. Appl. Phys. 98 041301 2012 Nanoscale 4 1422 Nanowire Field Effect Transistors: Principles and Applications (New York: Springer)2003 J. Phys. Chem. B 107 659 2007 J. Appl. Phys. 102 084303 2007 Nano Lett. 7 1003 2007 IEEE Sens. J. 7 919 2008 J. Alloys Compd. 462 175 2006 Nano Lett. 6 1656 2009 Nanotechnology 20 015203 2000 Phys. Rev. Lett. 476 331 2001 Phys. Rev. B 63 075205 2001 J. Cryst. Growth 223 201 2008 Appl. Phys. Lett. 93 103109 2009 Nano Lett. 9 3991 2003 Appl. Phys. Lett. 83 2052 1991 Phys. Rev. Lett. 67 1626 1991 Phys. Rev. B 44 1646 1990 Phys. Rev. Lett. 65 771 2006 Appl. Phys. Lett. 89 143504 2001 Chin. Phys. 10 844 2001 Science 293 76 2008 Nano Lett. 8 2378 2010 Phys. Rev. B 82 195309 1988 Phys. Rev. Lett. 60 848 2010 Adv. Phys. 59 261 2009 Cryst. Growth Des. 9 364 J. Synth. Cryst. 37 3761991 Z. Phys. B: Condens. Matter 85 319
[1]
.
[2]
.
[3]
.
[4]
.
[5]
.
[6]
.
[7]
.
[8]
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2014, Vol. 31 
