中国物理快报  2013, Vol. 30 Issue (12): 127101-127101    DOI: 10.1088/0256-307X/30/12/127101
  本期目录 | 过刊浏览 | 高级检索 |
Optoelectronic Properties of Pure and Co Doped Indium Oxide by Hubbard and modified Becke–Johnson Exchange Potentials
H. A. Rahnamaye Aliabad1*, M. Bazrafshan2, H. Vaezi2, Masood Yousaf3, Junaid Munir3, M. A. Saeed3
1Department of Physics, Hakim Sabzevari University, Sabzevar, Iran
2Department of Physics, Khayyam Institute of Higher Education, Mashhad, Iran
3Department of Physics, Universiti Teknologi Malaysia, Skudai 81310, Johor, Malaysia