Bipolar Resistive Switching Characteristics of TiN/HfOx
TAN Ting-Ting** , CHEN Xi, GUO Ting-Ting, LIU Zheng-Tang
State Key Lab of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072
Abstract ：Resistive switching characteristics of hafnium oxide are studied for possible nonvolatile memory device applications. The HfOx 2 flow rates. The films are amorphous, and the stoichiometric of the film is improved by increasing the O2 flow rate. Current-voltage characteristics of the TiN/HfOx x x
收稿日期: 2013-07-17
出版日期: 2013-11-21
:
73.40.Rw
(Metal-insulator-metal structures)
73.63.-b
(Electronic transport in nanoscale materials and structures)
72.20.Jv
(Charge carriers: generation, recombination, lifetime, and trapping)
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2013, Vol. 30 
