Anomalous Magneto-Transport Properties of Epitaxial Single-Crystal Bi Films on Si(111)
PANG Fei1,2, YIN Shu-Li1, LIANG Xue-Jin1, CHEN Dong-Min1
1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 2Department of Physics, Renmin University of China, Beijing 100872
Anomalous Magneto-Transport Properties of Epitaxial Single-Crystal Bi Films on Si(111)
PANG Fei1,2, YIN Shu-Li1, LIANG Xue-Jin1, CHEN Dong-Min1
1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 2Department of Physics, Renmin University of China, Beijing 100872
摘要Anomalous transport properties of 40-nm-thick single-crystal Bi(111) films grown on Si(111)-7×7 substrates is investigated. The magnetoresistance (MR) of the films in perpendicular magnetic field shows a regular positive behavior in the temperature range 2−300 K, the MR in parallel field (B||) displays a series of interesting features. Specifically, we observe a change of the MR (B||) behavior from positive to negative when the temperature is below 10 K. In the range 10−170 K, the MR (B||) is negative in the investigated field of 9 T. When T>170 K, a positive MR appears in the high field regime. The low temperature MR(B||) behavior in the parallel field can be understood by the competition between weak localization and weak anti-localization (WAL). Furthermore, our results suggest that the WAL is dominated by the interface carriers.
Abstract：Anomalous transport properties of 40-nm-thick single-crystal Bi(111) films grown on Si(111)-7×7 substrates is investigated. The magnetoresistance (MR) of the films in perpendicular magnetic field shows a regular positive behavior in the temperature range 2−300 K, the MR in parallel field (B||) displays a series of interesting features. Specifically, we observe a change of the MR (B||) behavior from positive to negative when the temperature is below 10 K. In the range 10−170 K, the MR (B||) is negative in the investigated field of 9 T. When T>170 K, a positive MR appears in the high field regime. The low temperature MR(B||) behavior in the parallel field can be understood by the competition between weak localization and weak anti-localization (WAL). Furthermore, our results suggest that the WAL is dominated by the interface carriers.
PANG Fei;YIN Shu-Li;LIANG Xue-Jin;CHEN Dong-Min
. Anomalous Magneto-Transport Properties of Epitaxial Single-Crystal Bi Films on Si(111)[J]. 中国物理快报, 2010, 27(10): 107102-107102.
PANG Fei, YIN Shu-Li, LIANG Xue-Jin, CHEN Dong-Min
. Anomalous Magneto-Transport Properties of Epitaxial Single-Crystal Bi Films on Si(111). Chin. Phys. Lett., 2010, 27(10): 107102-107102.
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