High Characteristic Temperature 1.3μm InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy
JI Hai-Ming1, YANG Tao1, CAO Yu-Lian2, XU Peng-Fei1, GU Yong-Xian1, MA Wen-Quan2, WANG Zhan-Guo1
1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 1000832Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
High Characteristic Temperature 1.3μm InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy
JI Hai-Ming1, YANG Tao1, CAO Yu-Lian2, XU Peng-Fei1, GU Yong-Xian1, MA Wen-Quan2, WANG Zhan-Guo1
1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 1000832Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
摘要We report the molecular beam epitaxy growth of 1.3 μm InAs/GaAs quantum-dot (QD) lasers with high characteristic temperature T0. The active region of the lasers consists of five-layer InAs QDs with p-type modulation doping. Devices with a stripe width of 4 μm and a cavity length of 1200 μm are fabricated and tested in the pulsed regime under different temperatures. It is found that T0 of the QD lasers is as high as 532 K in the temperature range from 10°C to 60°C. In addition, the aging test for the lasers under continuous wave operation at 100°C for 72 h shows almost no degradation, indicating the high crystal quality of the devices.
Abstract：We report the molecular beam epitaxy growth of 1.3 μm InAs/GaAs quantum-dot (QD) lasers with high characteristic temperature T0. The active region of the lasers consists of five-layer InAs QDs with p-type modulation doping. Devices with a stripe width of 4 μm and a cavity length of 1200 μm are fabricated and tested in the pulsed regime under different temperatures. It is found that T0 of the QD lasers is as high as 532 K in the temperature range from 10°C to 60°C. In addition, the aging test for the lasers under continuous wave operation at 100°C for 72 h shows almost no degradation, indicating the high crystal quality of the devices.
JI Hai-Ming;YANG Tao;CAO Yu-Lian;XU Peng-Fei;GU Yong-Xian;MA Wen-Quan;WANG Zhan-Guo. High Characteristic Temperature 1.3μm InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy[J]. 中国物理快报, 2010, 27(2): 27801-027801.
JI Hai-Ming, YANG Tao, CAO Yu-Lian, XU Peng-Fei, GU Yong-Xian, MA Wen-Quan, WANG Zhan-Guo. High Characteristic Temperature 1.3μm InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy. Chin. Phys. Lett., 2010, 27(2): 27801-027801.
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2010, Vol. 27 
